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RFL1N10L
September 1998
1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET
Description
This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09524.
Features
* 1A, 100V * rDS(ON) = 1.200
Ordering Information
PART NUMBER RFL1N10L PACKAGE TO-205AF BRAND RFL1N10L
NOTE: When ordering, use the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN (CASE) GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
File Number
1510.3
1
RFL1N10L
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFL1N10L 100 100 1 5 10 8.33 0.0667 -55 to 150 260 UNITS V V A A V W W/oC oC
oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 1M) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0 VGS = VDS, ID = 250A VDS = Rated BVDSS VDS = 0.8 x Rated BVDSS, VDS = 80V, TC = 125oC MIN 100 1 VGS = 0V, VDS = 25V, f = 1MHz (Figure 9) TYP 10 15 25 30 MAX 2 1 25 100 1.200 1.2 25 45 45 50 200 80 35 15 UNITS V V A A nA V ns ns ns ns pF pF pF
oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case
IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC
VGS = 10V, VDS = 0 ID = 1A, VGS = 5V (Figures 6, 7) ID = 1A, VGS = 5V ID 1A, VDD = 50V, RG = 6.25, VGS = 5V, RL = 50 (Figures 10, 11, 12)
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulse test: width 300s duty cycle 2%. 3. Repetitive rating: pulse witdh limited by maximum junction temperature. SYMBOL VSD trr TEST CONDITIONS ISD = 1A ISD = 2A, dISD/dt = 50A/s MIN TYP 100 MAX 1.4 UNITS V ns
2
RFL1N10L Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
1.2 1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 TC, CASE TEMPERATURE (oC) 125 150 0.8 0.6 0.4 0.2 0 25
1.0 0.8 0.6 0.4 0.2 0
50
75 100 125 TC, CASE TEMPERATURE (oC)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
IDS, DRAIN TO SOURCE CURRENT (A)
10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 1
TC = 25oC
8 7 6 5 4 3 2 VGS = 3V 1 VGS = 2V VGS = 4V VGS = 5V PULSE DURATION = 80s DUTY CYCLE 2% TC = 25oC VGS = 10V
0.1
0.01
0 1 10 100 VDS, DRAIN TO SOURCE (V) 1000 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
6 5 4 VDS = 10V PULSE DURATION = 80s DUTY CYCLE 2% -40oC 25oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE ()
2
ID(ON), DRAIN CURRENT (A)
1.5
125oC
VGS = 5V PULSE DURATION = 80s DUTY CYCLE 2%
125oC
3 2 125oC 1 -40oC 0 1 2 5 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 6
1
25oC -40oC
0.5
0
0
1
2
3 4 5 ID, DRAIN CURRENT (A)
6
7
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT
3
RFL1N10L Typical Performance Curves
2.5 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 1A VGS = 5V THRESHOLD VOLTAGE 2 NORMALIZED GATE 1.5
Unless Otherwise Specified (Continued)
2
VGS = VDS ID = 250A
1.5
1
1
0.5
0.5 -50
0 50 100 TJ, JUNCTION TEMPERATURE (oC)
150
-50
0 50 100 TJ, JUNCTION TEMPERATURE (oC)
150
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
240 200 C, CAPACITANCE (pF)
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
100 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 VGS, GATE TO SOURCE VOLTAGE (V) BVDSS RL = 50 IG(REF) = 0.094mA VGS = 5V VDD = VDSS VDD = VDSS 4 8
f = 1MHz
75
160 120 CISS 80 COSS 40 CRSS 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 60
6 50
25
GATE SOURCE VOLTAGE 0.75VDSS 0.75VDSS 0.50VDSS 0.50VDSS 0.25VDSS 0.25VDSS DRAIN SOURCE VOLTAGE I 20 G(REF) IG(ACT) I 80 G(REF) IG(ACT)
2
0 t, TIME (s)
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
tON td(ON) tr RL VDS
+
tOFF td(OFF) tf 90%
90%
RG DUT
-
VDD 0
10% 90%
10%
VGS VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
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RFL1N10L
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
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